TK65G10N1,RQ
- Manufacturer No:
- TK65G10N1,RQ
- Manufacture:
- Toshiba Semiconductor and Storage
- Package:
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- TK65G10N1,RQ
- Description:
- MOSFET N-CH 100V 65A D2PAK
In Stock
1489 pcs On sales
Purchase and inquiry
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Means of Payment
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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Toshiba Semiconductor and Storage TK65G10N1,RQ technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TK65G10N1,RQ.
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 81nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5400pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 65A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4.5mOhm @ 32.5A, 10V
- Series
- U-MOSVIII-H
- Power Dissipation (Max)
- 156W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D2PAK
Company Profile
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