SI3529DV-T1-E3
- Manufacturer No:
- SI3529DV-T1-E3
- Manufacture:
- Vishay / Siliconix
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- SI3529DV-T1-E3
- Description:
- MOSFET N/P-CH 40V 2.5A 6-TSOP
In Stock
0 pcs On sales
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Means of Payment
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.RFQ (Request for Quotations)
It is recommended to request for quotations to get the latest prices and inventories about the part. Our sales will reply to your request by email within 24 hours.IMPORTANT NOTICE
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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Vishay / Siliconix SI3529DV-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay / Siliconix SI3529DV-T1-E3.
- Supplier Device Package
- 6-TSOP
- Series
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 7nC @ 10V
- FET Type
- N and P-Channel
- Drain to Source Voltage (Vdss)
- 40V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 205pF @ 20V
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 2.5A, 1.95A
- Part Status
- Obsolete
- Power - Max
- 1.4W
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 125mOhm @ 2.2A, 10V
Company Profile
SI3529DV-T1-E3 Relevant information
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